View ipd60r2k1ce datasheet:

isc N-Channel MOSFET Transistor IPD60R2K1CE,IIPD60R2K1CEFEATURESStatic drain-source on-resistance:RDS(on)2.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 3.7 ADI Drain Current-Single Pulsed 6 ADMP Total Dissipation @T =25 38 WD CT Max. Operating Junction Temperature 150 jT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 3.26Channel-to-ambient thermal resistance/WRth(j-a) 621isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Channel MOS

Keywords - ALL TRANSISTORS DATASHEET

 ipd60r2k1ce.pdf Design, MOSFET, Power

 ipd60r2k1ce.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipd60r2k1ce.pdf Database, Innovation, IC, Electricity