View ipd60r380e6 datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPD60R380E6FEATURESWith TO-252(DPAK) packagingWith low gate drive requirementsVery high commutation ruggednessExtremely high frequency operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLCD&PDP TVPC silverboxUPS and solarABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 20 VGSSDrain Current-Continuous@T =25C 10.6I AD6.7T =100CI Drain Current-Single Pulsed 30 ADMP Total Dissipation 83 WDT Operating Junction Temperature -55~150 jT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance

Keywords - ALL TRANSISTORS DATASHEET

 ipd60r380e6.pdf Design, MOSFET, Power

 ipd60r380e6.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipd60r380e6.pdf Database, Innovation, IC, Electricity