View ipd60r3k4ce datasheet:

isc N-Channel MOSFET Transistor IPD60R3K4CE,IIPD60R3K4CEFEATURESStatic drain-source on-resistance:RDS(on)3.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 2.6 ADI Drain Current-Single Pulsed 3.9 ADMP Total Dissipation @T =25 29 WD CT Max. Operating Junction Temperature 150 jT Storage Temperature -40~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 4.26Channel-to-ambient thermal resistance/WRth(j-a) 621isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Channel M

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