View ipd60r450e6 datasheet:

isc N-Channel MOSFET Transistor IPD60R450E6,IIPD60R450E6FEATURESStatic drain-source on-resistance:RDS(on)0.45Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 9.2 ADI Drain Current-Single Pulsed 26 ADMP Total Dissipation @T =25 74 WD CT Max. Operating Junction Temperature 150 jT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 1.7Channel-to-ambient thermal resistance/WRth(j-a) 621isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Channel MO

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