View ipd60r460ce datasheet:

isc N-Channel MOSFET Transistor IPD60R460CE,IIPD60R460CEFEATURESStatic drain-source on-resistance:RDS(on)0.46Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 13.1 ADI Drain Current-Single Pulsed 26 ADMP Total Dissipation @T =25 102 WD CT Max. Operating Junction Temperature 150 jT Storage Temperature -40~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 1.22Channel-to-ambient thermal resistance/WRth(j-a) 621isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Channel

Keywords - ALL TRANSISTORS DATASHEET

 ipd60r460ce.pdf Design, MOSFET, Power

 ipd60r460ce.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipd60r460ce.pdf Database, Innovation, IC, Electricity