View irf1010epbf datasheet:

PD - 94965BIRF1010EPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 60Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 12ml Fast SwitchingGl Fully Avalanche RatedID = 84Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 c

Keywords - ALL TRANSISTORS DATASHEET

 irf1010epbf.pdf Design, MOSFET, Power

 irf1010epbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf1010epbf.pdf Database, Innovation, IC, Electricity