View irf520a datasheet:

IRF520AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.2 A Improved Gate Charge Extended Safe Operating AreaTO-220 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100Continuous Drain Current (TC=25 C)9.2IDAContinuous Drain Current (TC=100 C)6.51IDM Drain Current-PulsedO 37 A +VGS Gate-to-Source Voltage _ 20 V2EAS Single Pulsed Avalanche EnergyO 113 mJIAR Avalanche Current 1O 9.2 AEAR Repetitive Avalanche Energy 1O 4.5 mJdv/dt Peak Diode Recovery dv/dt 36.5 V/nsOTotal Power Dissipation (TC=25 C) W45PD

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