View irf5210 datasheet:

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF5210,IIRF5210FEATURESStatic drain-source on-resistance:RDS(on)0.06Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -100 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous -40 ADI Drain Current-Single Pulsed -140 ADMP Total Dissipation @T =25 200 WD CMax. Operating Junction Temperature 175 TjT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(j-c)

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