All Transistors. Datasheet

 

View irf5210lpbf irf5210spbf datasheet:

irf5210lpbf_irf5210spbfirf5210lpbf_irf5210spbf

PD - 97049BIRF5210SPbFIRF5210LPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = -100Vl 150C Operating Temperaturel Fast SwitchingRDS(on) = 60ml Repetitive Avalanche Allowed up to TjmaxGl Some Parameters are Different fromIRF5210S/LID = -38ASl P-Channell Lead-FreeDDDescriptionFeatures of this design are a 150C junctionoperating temperature, fast switching speed andSSimproved repetitive avalanche rating . These fea-DDGtures combine to make this design an extremely Gefficient and reliable device for use in a wideD2Pak TO-262variety of other applications. IRF5210LPbFIRF5210SPbFGDSGate Drain SourceAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C -38 AContinuous Drain Current, VGS @ -10V ID @ TC = 100C -24Continuous Drain Current, VGS @ -10V IDM -140

 

Keywords - ALL TRANSISTORS DATASHEET

 irf5210lpbf irf5210spbf.pdf Design, MOSFET, Power

 irf5210lpbf irf5210spbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf5210lpbf irf5210spbf.pdf Database, Innovation, IC, Electricity

 

 
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