View irf5210s datasheet:

PD - 91405CIRF5210S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5210S)VDSS = -100V Low-profile through-hole (IRF5210L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -40A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely lowon-resistance per silicon area. This benefit, combined withthe fast switching speed and ruggedized device design thatHEXFET Power MOSFETs are well known for, provides thedesigner with an extremely efficient and reliable device foruse in a wide variety of applications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides the highestpower capability and the lowest possible on-resistance in Pak TO-262any existing surf

Keywords - ALL TRANSISTORS DATASHEET

 irf5210s.pdf Design, MOSFET, Power

 irf5210s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf5210s.pdf Database, Innovation, IC, Electricity