View irf530a datasheet:

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100Continuous Drain Current (TC=25 )14IDAContinuous Drain Current (TC=100 )9.91IDM Drain Current-Pulsed A56O_VGS Gate-to-Source Voltage VEAS Single Pulsed Avalanche Energy 2 mJ261OIAR Avalanche Current 114 AOEAR Repetitive Avalanche Energy 15.5 mJO3dv/dt Peak Diode Recovery dv/dt V/ns6.5 OTotal Power Dissipation (TC=25 ) 55 WPDLinear Derating Fa

Keywords - ALL TRANSISTORS DATASHEET

 irf530a.pdf Design, MOSFET, Power

 irf530a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf530a.pdf Database, Innovation, IC, Electricity