View irf9z14 sihf9z14 datasheet:

IRF9Z14, SiHF9Z14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.50RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 12 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 Ease of ParallelingConfiguration Single Simple Drive RequirementsS Compliant to RoHS Directive 2002/95/ECTO-220ABDESCRIPTIONThird generation Power MOSFETs from Vishay provide theGdesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness. The TO-220AB package is universally preferred for allScommercial-industrial applications at power dissipationDDGlevels to approximately 50 W. The low thermal resistanceP-Channel MOSFETand low package cost of the TO-220AB c

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