View irf9z14s sihf9z14s irf9z14l sihf9z14l datasheet:
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 60 Advanced Process TechnologyRDS(on) ()VGS = - 10 V 0.50 Surface Mount (IRF9Z14S, SiHF9Z14S)Qg (Max.) (nC) 12 Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) 175 C Operating TemperatureQgs (nC) 3.8 Fast SwitchingQgd (nC) 5.1 P-Channel Fully Avalanche RatedConfiguration Single Compliant to RoHS Directive 2002/95/ECDESCRIPTIONThird generation Power MOSFETs from Vishay utilizeadvanced processing techniques to achieve extremely lowon-resistance per silicon area. This benefit, combined withSI2PAK (TO-262) D2PAK (TO-263)the fast switching speed and ruggedized device design thatPower MOSFETs are well known for, provides the designerwith an extremely effic
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