View irfi9z34g sihfi9z34g datasheet:

IRFI9Z34G, SiHFI9Z34GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.14RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 34 COMPLIANT P-ChannelQgs (nC) 9.9 175 C Operating TemperatureQgd (nC) 16 Dynamic dV/dt RatingConfiguration Single Low Thermal Resistance Lead (Pb)-free AvailableSTO-220 FULLPAKDESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance andcost-effectiveness.The TO-220 FULLPAK eliminates the need for additionalinsulating hardware in commercial-industrial applications.The molding compound used provides a high isolationDcapability and a low t

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 irfi9z34g sihfi9z34g.pdf Design, MOSFET, Power

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