View irfibc40glc sihfibc40glc datasheet:

IRFIBC40GLC, SiHFIBC40GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.2f = 60 Hz)RoHS*Qg (Max.) (nC) 39COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 19 Low Thermal ResistanceConfiguration Single Lead (Pb)-free AvailableDTO-220 FULLPAKDESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,G ruggedized device design, low on-resistance andcost-effectiveness.The TO-220 FULLPAK eliminates the need for additionalinsulating hardware in commercial-industrial applications.SThe molding compound used provides a high isolationSDGcapability and a low thermal resistance between the tab andN-C

Keywords - ALL TRANSISTORS DATASHEET

 irfibc40glc sihfibc40glc.pdf Design, MOSFET, Power

 irfibc40glc sihfibc40glc.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfibc40glc sihfibc40glc.pdf Database, Innovation, IC, Electricity