View irfibe30g sihfibe30g datasheet:

IRFIBE30G, SiHFIBE30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 78COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.6 Dynamic dV/dt RatingQgd (nC) 45 Low Thermal ResistanceConfiguration Single Lead (Pb)-free AvailableDTO-220 FULLPAKDESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andGcost-effectiveness.The TO-220 FULLPAK eliminates the need for additionalinsulating hardware in commercial-industrial applications.S The moulding compound used provides a high isolationSDG capability and a low thermal resistance between the tab andN-Chan

Keywords - ALL TRANSISTORS DATASHEET

 irfibe30g sihfibe30g.pdf Design, MOSFET, Power

 irfibe30g sihfibe30g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfibe30g sihfibe30g.pdf Database, Innovation, IC, Electricity