All Transistors. Datasheet

 

View irfiz24npbf datasheet:

irfiz24npbfirfiz24npbf

PD - 94808IRFIZ24NPbFHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.07 Fully Avalanche RatedG Lead-FreeDescriptionID = 14ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of applications.The TO-220 Fullpak eliminates the need for additionalinsulating hardware in commercial-industrialapplications. The moulding compound used providesa high isolation capability and a low thermal resistancebetween the tab

 

Keywords - ALL TRANSISTORS DATASHEET

 irfiz24npbf.pdf Design, MOSFET, Power

 irfiz24npbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfiz24npbf.pdf Database, Innovation, IC, Electricity

 

 
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