View irfp340a datasheet:

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V400oContinuous Drain Current (TC=25 C)11IDAoCContinuous Drain Current (TC=100 )7IDM Drain Current-Pulsed 1 44 AOVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJ553OIAR Avalanche Current 1 11 AOEAR Repetitive Avalanche Energy 1 mJ16.2O3dv/dt Peak Diode Recovery dv/dt V/ns4.0 OTotal Power Dissipation (TC=25 oC )162 WPDLinear Derating Factor W/ oC1.3 Operating Junction and

Keywords - ALL TRANSISTORS DATASHEET

 irfp340a.pdf Design, MOSFET, Power

 irfp340a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfp340a.pdf Database, Innovation, IC, Electricity