View irfp3415 datasheet:
PD - 93962IRFP3415HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.042 Fully Avalanche RatedGDescription ID = 43ASFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fastswitching speed and ruggedized device design thatHEXFET power MOSFETs are well known for, providesthe designer with an extremely efficient and reliabledevice for use in a wide variety of applications.The TO-247 package is preferred for commercial-industrial applications where higher power levelspreclude the use of TO-220 devices. The TO-247 issimilar but superior to the earlier TO-218 packagebecause of its isolated mounting hole. TO-247A
Keywords - ALL TRANSISTORS DATASHEET
irfp3415.pdf Design, MOSFET, Power
irfp3415.pdf RoHS Compliant, Service, Triacs, Semiconductor
irfp3415.pdf Database, Innovation, IC, Electricity



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet