View irfp9150 datasheet:

IRFP9150Data Sheet August 1999 File Number 2293.425A, 100V, 0.150 Ohm, P-Channel Power FeaturesMOSFET 25A, 100VThis advanced power MOSFET is designed, tested, and rDS(ON) = 0.150guaranteed to withstand a specified level of energy in the Single Pulse Avalanche Energy Ratedbreakdown avalanche mode of operation. It is a P-Channelenhancement mode silicon-gate power field effect transistor SOA is Power Dissipation Limiteddesigned for applications such as switching regulators, Nanosecond Switching Speedsswitching convertors, motor drivers, relay drivers, and driversfor high power bipolar switching transistors requiring high Linear Transfer Characteristicsspeed and low gate drive power. These types can be High Input Impedanceoperated directly from integrated circuits.SymbolThe P-Channel IRFP9150 is an approximate electricalc

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