View irfr110a irfu110a datasheet:

IRFR/U110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage 100 VContinuous Drain Current (TC=25 C)4.7IDAContinuous Drain Current (TC=100 C) 31IDM Drain Current-PulsedO 19 A +VGS Gate-to-Source Voltage _ 0 V2EAS Single Pulsed Avalanche Energy 59 mJOIAR Avalanche Current 14.7 AOEAR Repetitive Avalanche Energy 12 mJO3dv/dt Peak Diode Recovery dv/dtO 6.5 V/ns*Total Power Dissipation (TA=25 ) 2.5 WCPD Total Power Dis

Keywords - ALL TRANSISTORS DATASHEET

 irfr110a irfu110a.pdf Design, MOSFET, Power

 irfr110a irfu110a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfr110a irfu110a.pdf Database, Innovation, IC, Electricity