View irfr120a irfu120a datasheet:

IRFR/U120AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAKA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage 100 VContinuous Drain Current (TC=25 C)8.4IDAContinuous Drain Current (TC=100 C) 5.31IDM Drain Current-PulsedO 34 A +VGS Gate-to-Source Voltage _ 0 V2EAS Single Pulsed Avalanche Energy 141 mJOIAR Avalanche Current 18.4 AOEAR Repetitive Avalanche Energy 13.2 mJO3dv/dt Peak Diode Recovery dv/dtO 6.5 V/ns*Total Power Dissipation (TA=25 ) 2.5 WCPD Total Power

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