View irfr130a datasheet:

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 2 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100Continuous Drain Current (TC=25 ) 13IDAContinuous Drain Current (TC=100 )8.21IDM Drain Current-Pulsed 52 AO_VGS Gate-to-Source Voltage VEAS Single Pulsed Avalanche Energy 2225 mJO1IAR Avalanche Current 13 AO1EAR Repetitive Avalanche Energy 4.1 mJOdv/dt Peak Diode Recovery dv/dt 3 6.5 V/nsO*Total Power Dissipation (TA=25 )2.5 WPD Total Power Dissipation (TC=25 )41

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