View irlz34n 1 datasheet:

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 30 Alow on-state resistance and has Ptot Total power dissipation 68 Wintegral zener diodes giving ESD Tj Junction temperature 175 Cprotection up to 2kV. It is intended for RDS(ON) Drain-source on-state 35 muse in switched mode power supplies resistance VGS = 10 Vand general purpose switchingapplications.PINNING - TO220AB PIN CONFIGURATION SYMBOLPIN DESCRIPTIONdtab1 gate2 draing3 sourcetab drains1 2 3LIMITING VALUESLimiting values in accordance with the Absol

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