View irlz44n datasheet:

PD - 9.1346BIRLZ44NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.022 Fast SwitchingG Fully Avalanche RatedID = 47ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientdevice for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationTO-220ABlevels to approximately 50 watts. The low thermal resistanceand low package cost of the TO-220 contribute to its wideaccep

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