View ixfb100n50p datasheet:

IXFB 100N50PVDSS = 500 VPolarHVTM HiPerFETID25 = 100 APower MOSFET RDS(on) 49 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings PLUS264TM (IXFB)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuous 30 V(TAB)GVGSM Transient 40 VDSID25 TC = 25 C 100 AIDRMS External lead current limit 75 AIDM TC = 25 C, pulse width limited by TJM 250 AG = Gate D = DrainS = Source TAB = DrainIAR TC = 25 C 100 AEAR TC = 25 C 100 mJEAS TC = 25 C5 JFeaturesdv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 20 V/nslInternational standard packagesTJ 150 C, RG = 2 lFast recovery diodePD TC = 25 C 1250 W lUnclamped Inductive Switching (UIS)ratedTJ -55

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