View ixfn200n06 datasheet:

!VDSS ID25 RDS(on)HiPerFETTMIXFN 200 N06 60 V 200 A 6 mWPower MOSFETsIXFN 180 N07 70 V 180 A 7 mWIXFN 200 N07 70 V 200 A 6 mWN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrtrr 250 nsSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C N07 70 VN06 60 VSVDGR TJ = 25C to 150C; RGS = 1 MW N07 70 VGN06 60 VVGS Continuous 20 VVGSM Transient 30 VSID25 TC= 25C; Chip capability 200N06/200N07 200 A D180N07 180 AIL(RMS) Terminal current limit 100 AG = Gate D = DrainS = SourceIDM TC = 25C, pulse width limited by TJM 600 AEither Source terminal at miniBLOC can be usedIAR TC = 25C 100 Aas Main or Kelvin SourceEAR TC = 25C30 mJEAS TC = 25C 2 JFeaturesdv/dt IS IDM, di/dt 1

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