View ixfn200n10p datasheet:

VDSS = 100 VIXFN 200N10PPolarTM HiPerFETID25 = 200 APower MOSFET RDS(on) 7.5 m N-Channel Enhancement Modetrr 150 nsFast Intrinsic DiodeAvalanche RatedminiBLOC, SOT-227 B (IXFN)Symbol Test Conditions Maximum RatingsE153432SVDSS TJ = 25C to 175C 100 VGVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGS Continuous 20 VVGSM Transient 30 VSID25 TC = 25C 200 ADID(RMS) External lead current limit 100 AIDM TC = 25C, pulse width limited by TJM 400 AG = Gate D = DrainS = SourceIAR TC = 25C60 AEither Source terminal S can be used as theEAR TC = 25C 100 mJSource terminal or the Kelvin Source (gateEAS TC = 25C4 Jreturn) terminal.dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 10 V/nsTJ 150C, RG = 4 FeaturesPD TC = 25C 680 W Internationa

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