All Transistors. Datasheet

 

View ixfn210n30p3 datasheet:

ixfn210n30p3ixfn210n30p3

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VIXFN210N30P3Power MOSFET ID25 = 192A RDS(on) 14.5m trr 250nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierminiBLOCE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300 VSVGSS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C 192 AG = Gate D = DrainS = SourceIDM TC = 25C, Pulse Width Limited by TJM 550 AIA TC = 25C 105 AEither Source Terminal S can be used asthe Source Terminal or the Kelvin SourceEAS TC = 25C4 J(Gate Return) Terminal.dv/dt IS IDM, VDD VDSS, TJ 150C 35 V/nsPD TC = 25C 1500 WFeaturesTJ -55 ... +150 CTJM 150 CTstg -55 ... +150 C International Standard Package min

 

Keywords - ALL TRANSISTORS DATASHEET

 ixfn210n30p3.pdf Design, MOSFET, Power

 ixfn210n30p3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixfn210n30p3.pdf Database, Innovation, IC, Electricity

 

 
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