View ixfn230n20t datasheet:

Advance Technical InformationGigaMOSTM VDSS = 200VIXFN230N20TID25 = 230APower MOSFET RDS(on) 7.5m trr 200nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227Fast Intrinsic DiodeE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C, RGS = 1M 200 VVGSS Continuous 20 VSVGSM Transient 30 VDID25 TC = 25C 220 AG = Gate D = DrainIL(RMS) External Lead Current Limit 200 AS = SourceIDM TC = 25C, Pulse Width Limited by TJM 630 AEither Source Terminal S can be used asIA TC = 25C 100 Athe Source Terminal or the Kelvin SourceEAS TC = 25C3 J( Gate Return ) Terminal.dV/dt IS IDM, VDD VDSS, TJ 175C 20 V/nsFeaturesPD TC = 25C 1090 W TJ -55 ... +175 CInternational Standard Packag

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