View ixfn24n100 datasheet:

HiPerFETTM Power VDSS = 1000VIXFN24N100MOSFET ID25 = 24A RDS(on) 390m N-Channel Enhancement Modetrr 250nsAvalanche RatedFast Intrinsic DiodeminiBLOC, SOT-227 BSymbol Test Conditions Maximum RatingsE153432VDSS TJ = 25C to 150C 1000 VSGVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 VSDID25 TC = 25C24 AIDM TC = 25C, pulse width limited by TJM 96 AG = Gate D = DrainIA TC = 25C24 AS = SourceEAS TC = 25C3 JEither Source terminal at miniBLOC can be usedas Main or Kelvin SourcedV/dt IS IDM, VDD VDSS, TJ 150C 5 V/nsPD TC = 25C 568 WFeaturesTJ -55 ... +150 C International standard packageTJM 150 C Encapsulating epoxy meetsUL 94 V-0, flammability classificationTstg -55 ... +150 C mini

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