All Transistors. Datasheet

 

View ixgh72n60c3 datasheet:

ixgh72n60c3ixgh72n60c3

VCES = 600VGenX3TM 600V IGBT IXGH72N60C3IC110 = 72A VCE(sat) 2.5V tfi (typ) = 55nsHigh-Speed PT IGBT for40-100kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC TabEIC25 TC = 25C (Limited by Leads) 75 AIC110 TC = 110C (Chip Capability) 72 AICM TC = 25C, 1ms 360 AG = Gate C = CollectorE = Emitter Tab = CollectorIA TC = 25C 50 AEAS TC = 25C 500 mJSSOA VGE= 15V, TVJ = 125C, RG = 2 ICM = 150 A(RBSOA) Clamped Inductive Load VCE VCESFeaturesPC TC = 25C 540 W Optimized for Low Switching LossesTJ -55 ... +150 C Square RBSOATJM 150 C Avalanche RatedTstg -55 ... +150 C International Standard PackageTL Maximum Lead Temperature for Soldering

 

Keywords - ALL TRANSISTORS DATASHEET

 ixgh72n60c3.pdf Design, MOSFET, Power

 ixgh72n60c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgh72n60c3.pdf Database, Innovation, IC, Electricity

 

 
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