View ixgr72n60c3d1 datasheet:

TMVCES = 600VGenX3 600V IGBTIXGR72N60C3D1IC110 = 35Awith DiodeVCE(sat) 2.7VHigh-Speed Low-Vsat PT IGBTtfi(typ) = 55ns40-100 kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS 247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC Isolated TabEIC25 TC = 25C (Limited by Leads) 75 AIC110 TC = 110C35 AG = Gate C = CollectorIF110 TC = 110C36 A E = EmitterICM TC = 25C, 1ms 400 AIA TC = 25C50 AFeaturesEAS TC = 25C 500 mJ SSOA VGE = 15V, TVJ = 125C, RG = 2 ICM = 150 ASilicon Chip on Direct-Copper Bond (DCB) Substrate(RBSOA) Clamped Inductive Load VCE VCES Optimized for Low Switching LossesPC TC = 25C 200 W Square RBSOA Isolated Mounting SurfaceTJ -55 ... +150 C Anti-Parallel Ultra Fast

Keywords - ALL TRANSISTORS DATASHEET

 ixgr72n60c3d1.pdf Design, MOSFET, Power

 ixgr72n60c3d1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgr72n60c3d1.pdf Database, Innovation, IC, Electricity