View ixta2n80 ixtp2n80 datasheet:

VDSS = 800 VHigh Voltage MOSFET IXTA 2N80ID25 = 2 AIXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement ModeAvalanche Energy RatedPreliminary DataSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSID25 TC = 25C2 AIDM TC = 25C, pulse width limited by TJM 8 ATO-263 AA (IXTA)IAR 2 AEAR TC = 25C6 mJEAS TC = 25C 200 mJGdv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 5 V/nsSD (TAB)TJ 150C, RG = 18 PD TC = 25C54 WG = Gate, D = Drain,TJ -55 ... +150 CS = Source, TAB = DrainTJM 150 CTstg -55 ... +150 CMd Mounting torque 1.13/10 Nm/lb.in.FeaturesWeight 4 gMaximum lead temperature for soldering 300 C International standard packages1.6 mm (0

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