View khb1d2n80d i datasheet:

KHB1D2N80D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D2N80DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20_switching mode power supplies. B 6.10 + 0.20_C 5.34 + 0.30_D 0.70 + 0.20_E 2.70 + 0.15B_F 2.30 + 0.10G 0.96 MAXFEATURES H 0.90 MAXHJVDSS= 800V, ID= 1.2A _J 1.80 + 0.20E_K 2.30 + 0.10G NDrain-Source ON Resistance : _L 0.50 + 0.10F F M _+M 0.50 0.10RDS(ON)=16(Max), @VGS = 10VN 0.70 MINO 0.1 MAXQg = 7.0nC(typ.) 1 2 31. GATE2. DRAIN3. SOURCEOMAXIMUM RATING (Ta=25)DPAK (1)RATINGCHARACTERISTIC SYMBOL UNITKHB1D2N80D KHB1D2

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