View kp8n60d datasheet:

KP8N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KP8N60DThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLavalanche characteristics. It is mainly suitable for active power factorC D_A 6.60 + 0.20_B 6.10 + 0.20correction and switching mode power supplies._C 5.34 + 0.30_D 0.70 + 0.20_E 2.70 + 0.15BFEATURES _+F 2.30 0.10G 0.96 MAXVDSS=600V, ID=8AH 0.90 MAXHJ_J 1.80 + 0.20EDrain-Source ON Resistance : _K 2.30 + 0.10G N_L 0.50 + 0.10RDS(ON)(Max)=0.58 @VGS=10VF F M _+M 0.50 0.10Qg(typ.)= 16nCN 0.70 MINO 0.1 MAX1. GATEMAXIMUM RATING (Tc=25)1 2 32. DRAIN3. SOURCEOCHARACTERISTIC SYMBOL RATING UNITVDSSDrain-Source Voltage 600 V

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