View kp8n60f datasheet:

isc N-Channel MOSFET Transistor KP8N60FFEATURESStatic drain-source on-resistance:RDS(on) 0.58Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for active power factor correction and switching modePower suppliesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 8 ADI Drain Current-Single Pulsed 18 ADMP Total Dissipation @T =25 37.9 WD CT Max. Operating Junction Temperature 150 jT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 3.3Channel-to-ambient thermal resistance/WRth(ch-a) 62.51isc websit

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