View krc660e-krc664e datasheet:

SEMICONDUCTOR KRC660E~KRC664EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.Simplify Circuit Design.1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process._+A1 1.0 0.052_+B 1.6 0.05High Packing Density._+B1 1.2 0.05C 0.503 4_+D 0.2 0.05EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW)_+H 0.5 0.05_+P J 0.12 0.05PC 54P 5R1Q1 Q2B1. Q1 IN (BASE)2. Q , Q COMMON (EMITTER)1 23. Q2 IN (BASE)4. Q2 OUT (COLLECTOR)E1 2 35. Q1 OUT (COLLECTOR)TESVMAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITCHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 50 V PC *Collector Power Dissipation 200 mWVCEOCollector-Emitter Voltage 5

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 krc660e-krc664e.pdf Design, MOSFET, Power

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