View kst8050 datasheet:

SMD Type TransistorsSMD TypeNPN TransistorsKST8050SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13FeaturesCollector Current: IC=1.5A1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 5 VCollector Current -Continuous IC 1.5 ACollector Dissipation PC 0.3 WJunction Temperature Tj 150Storage Temperature Tstg -55 to 150Electrical Characteristics Ta = 25Parameter Symbol Testconditions Min Typ Max UnitCollector-base breakdown voltage VCBO IC = 100 uA, I E = 0 40 VCollector-emitter breakdown voltage VCEO IC = 1mA , IB = 0 25 VEmitter-base Breakdown voltage VEBO IE = 100 uA, I C = 0 5 VCollector-base cut-off current ICBO VCB = 40 V , IE = 0 0.1 ACollector-emitter c

Keywords - ALL TRANSISTORS DATASHEET

 kst8050.pdf Design, MOSFET, Power

 kst8050.pdf RoHS Compliant, Service, Triacs, Semiconductor

 kst8050.pdf Database, Innovation, IC, Electricity