View kst8050d-50 datasheet:

SMD Type TransistorsSMD TypeNPN TransistorsKST8050D-50SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13Features Collector Current Capability IC=1.2A Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 50 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 6 VCollector Current -Continuous IC 1.2 ACollector Dissipation PC 250 mWJunction Temperature Tj 150Storage Temperature Tstg -55 to 150Electrical Characteristics Ta = 25Parameter Symbol Testconditions Min Typ Max UnitCollector-base breakdown voltage VCBO IC = 100 uA, I E = 0 50 VCollector-emitter breakdown voltage VCEO IC = 1mA , IB = 0 50 VEmitter-base Breakdown voltage VEBO IE = 100 uA, I C = 0 6 VCollector-base cut-of

Keywords - ALL TRANSISTORS DATASHEET

 kst8050d-50.pdf Design, MOSFET, Power

 kst8050d-50.pdf RoHS Compliant, Service, Triacs, Semiconductor

 kst8050d-50.pdf Database, Innovation, IC, Electricity