View ktc1027 datasheet:

SEMICONDUCTOR KTC1027TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. B DFEATURE Complementary to KTA1023.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHA RACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBOCollector-Base Voltage 120 VH 0.55 MAXFF_J 14.00 + 0.50VCEOCollector-Emitter Voltage 120 V K 0.35 MINHH H_L 0.75 + 0.10VEBO E M 4Emitter-Base Voltage 5 V MN 25O 1.25ICCollector Current 800 mAL1 2 3HP 1.50Q 0.10 MAXIEEmitter Current -800 mA N N_R 12.50 + 0.501. EMITTERS 1.00PCCollector Power Dissipation 1 W2. COLLECTORTj 3. BASEJunction Temperature 150 Tstg -55 150 Storage Temperature RangeTO-92LELECTRICAL CHARACTERISTICS (Ta=25 )CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

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