View ktc8050s datasheet:

SEMICONDUCTOR KTC8050STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to KTC8550S.DIM MILLIMETERS_A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.10VCBOCollector-Base Voltage 35 V L 0.55P PM 0.20 MINN 1.00+0.20/-0.10VCEOCollector-Emitter Voltage 30 VP 7VEBOEmitter-Base Voltage 5 VMICCollector Current 800 mA1. EMITTERIEEmitter Current -800 mA2. BASEPC *Collector Power Dissipation 350 mW3. COLLECTORTjJunction Temperature 150Tstg -55 150Storage Temperature RangeSOT-23* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )MarkinghFE RankLot No.Type NameBKELECTRICAL CHARACTERISTICS (Ta=25 )CHARACTERISTIC SYMBOL T

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