View ktd1411 datasheet:

SEMICONDUCTOR KTD1411TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE DARLINGTON TRANSISTOR.ABDCFEATURESEHigh DC Current Gain : hFE=3000(Min.) F(VCE=2V, IC=1A)GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBOCollector-Base Voltage 80 V_+F 11.0 0.3G 2.9 MAXVCEOCollector-Emitter Voltage 60 V MH 1.0 MAXJ 1.9 MAXVEBOEmitter-Base Voltage 10 VO +_K 0.75 0.15NP_+L 15.50 0.51 2 3IC _Collector Current 4 A +M 2.3 0.1_+N 0.65 0.15IB O 1.6Base Current 0.5 A 1. EMITTERP 3.4 MAX2. COLLECTOR3. BASEPCCollector Power Dissipation (Tc=25 ) 15 WTjJunction Temperature 150TO-126Tstg -55 150Storage Temperature RangeELECTRICAL CHARACTERISTICS (Ta=25 )CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP.

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