View ktd1414 datasheet:

isc Silicon NPN Darlington Power Transistor KTD1414DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsHammer driver,pulse motor driver applicationsPower amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 4 ACI Base Current-Continuous 0.5 ABCollector Power DissipationP 25 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscs

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