View mdd4n60brh mdi4n60bth datasheet:

MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0General Description Features The MDD/I4N60B uses advanced Magnachips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 3.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 2.0 @ VGS = 10V MDD/I4N60B is suitable device for SMPS, HID and general Applications purpose applications. . Power Supply PFC High Current, High Speed Switching D G D S I-PAK G (TO-251) SAbsolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V TC=25oC 3.5 A Continuous Drain Current ID TC=100oC 2.2 A Pulsed Drain Current(1) IDM 14 A TC=25oC 67.5 W Power Dissipation PD W/ oC Derate above 25 oC 0.54 Repetitive Avalanche Energy(1) EAR 6.75 mJ P

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