View mtd6n20e-d datasheet:

MTD6N20EPower MOSFET6 A, 200 V, N-Channel DPAKThis advanced Power MOSFET is designed to withstand highenergy in the avalanche and commutation modes. The new energyefficient design also offers a drain-to-source diode with a fastrecovery time. Designed for low voltage, high speed switchinghttp://onsemi.comapplications in power supplies, converters and PWM motor controls,these devices are particularly well suited for bridge circuits where6 AMPERES, 200 VOLTSdiode speed and commutating safe operating areas are critical andRDS(on) = 460 mWoffer additional safety margin against unexpected voltage transients.FeaturesN-Channel Avalanche Energy SpecifiedD Source-to-Drain Diode Recovery Time Comparable to aDiscrete Fast Recovery Diode Diode is Characterized for Use in Bridge CircuitsG IDSS and VDS(on) Specified at Elevated Temperature

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