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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD6N20E/DDesigner's Data SheetMTD6N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES200 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.7 OHMenergy in the avalanche and commutation modes. The new energyefficient design also offers a draintosource diode with a fastrecovery time. Designed for low voltage, high speed switchingapplications in power supplies, converters and PWM motorcontrols, these devices are particularly well suited for bridge circuitswhere diode speed and commutating safe operating areas arecritical and offer additional safety margin against unexpectedvoltage transients.D Avalanche Energy Specified Source

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