View mtp12n10e datasheet:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP12N10E/DDesigner's Data SheetMTP12N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high12 AMPERESenergy in the avalanche and commutation modes. The new energy100 VOLTSefficient design also offers a draintosource diode with a fastRDS(on) = 0.16 OHMrecovery time. Designed for low voltage, high speed switchingapplications in power supplies, converters and PWM motorcontrols, these devices are particularly well suited for bridge circuitswhere diode speed and commutating safe operating areas arecritical and offer additional safety margin against unexpectedvoltage transients. D Designed to Eliminate the Need for External Zener TransientSu

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