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MUN5111 SeriesCOLLECTORBias Resistor Transistor33PNP SiliconBASER111R222SOT-323(SC-70)EMITTER( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emitter Voltage V 50CEO VdcVdcCollector-Base Voltage VCBO 50Collector Current-Continuous IC mAdc100Thermal CharacteristicsMax UnitCharacteristics SymbolTotal Device Dissipation FR-5 Board PD 202 (1)mW (1)TA=25 C310 (2) Derate above 25 C(1)1.6 mW/ C2.5 (2)R JAThermal Resistance, Junction to Ambient (1) 618 C/W403TJ,TstgJunction and Storage, Temperature Range-55 to +150 C1.FR-4 @ minimum pad2.FR-4 @ 1.0 1.0 inch PadDevice Marking and Resistor ValuesDevice Marking R1(K) R2(K) Device Marking R1(K) R2(K)10MUN5111 6A 10 MUN5131 6H 2.2 2.2MUN5112 6B 22 22 4.7MUN5132 6J 4.74.7MUN5113 47 47 MUN5133 476C 6K10

 

Keywords - ALL TRANSISTORS DATASHEET

 mun5111.pdf Design, MOSFET, Power

 mun5111.pdf RoHS Compliant, Service, Triacs, Semiconductor

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