View mun5111dw datasheet:

MUN5111DW Series6 546Dual Bias Resistor Transistor54R1R2PNP Silicon Q2123R Q21SOT-363(SC-88)R11 2 3( T =25 C unless otherwise noted)M aximum R atings ARating Symbol Value UnitCollector-Emitter Voltage V -50CEO VdcVdcCollector-Base Voltage VCBO -50Collector Current-Continuous IC mAdc-100Thermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation FR-5 BoardPD 187mW (1)TA=25 C1.5 Derate above 25 C mW/ C493RC/WThermal Resistance, Junction to Ambient (1) JA325TJ,TstgJunction and Storage, Temperature Range -55 to +150 C1.FR-4 @ minimum pad2.FR-4 @ 1.0 1.0 inch PadDevice Marking and Resistor ValuesDevice Marking R1(K) R2(K) Device Marking R1(K) R2(K)10MUN5111 0A 10 MUN5131 0H 2.2 2.2MUN5112 0B 22 22 4.7MUN5132 0J 4.74.7MUN5113 47 47 MUN5133 470C 0K10MUN

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